Wareegga darawalnimada semiconductor Power waa qayb muhiim ah oo ka mid ah wareegyada isku dhafan, awood leh, oo loo isticmaalo darawalka IGBT ICs marka lagu daro bixinta heerka wadista iyo hadda, inta badan leh hawlaha ilaalinta wadista, oo ay ku jiraan ilaalinta wareegga gaaban ee desaturation, xiritaanka korantada, Miller clamp, xiritaanka laba-marxalad , Xiritaanka jilicsan, SRC ( xakamaynta heerka dilaaga ah), iwm. Alaabta ayaa sidoo kale leh heerar kala duwan oo waxqabadka dahaarka ah.Si kastaba ha ahaatee, sida wareeg ah isku dhafan, xirmo ay go'aamiso isticmaalka awoodda ugu badan, darawalka IC soo saarka hadda wuxuu noqon karaa in ka badan 10A xaaladaha qaarkood, laakiin weli ma buuxin karaan baahida wadista ee modules IGBT hadda sare, warqad this ka hadli doonaa wadista IGBT ah. balaadhinta hadda iyo hadda.
Sida loo balaadhiyo darawalka hadda
Marka hadda waduhu u baahan yahay in la kordhiyo, ama marka la wado IGBT-yada leh awood sare oo hadda iyo albaabka weyn, waxaa lagama maarmaan ah in la ballaariyo hadda darawalka IC.
Isticmaalka transistors-ka laba-cirifoodka
Naqshadaynta ugu badan ee darawalka albaabka IGBT waa in la xaqiijiyo ballaarinta hadda iyadoo la adeegsanayo raace-raac dhammaystiran.Wax soo saarka hadda ee emitter transistor-ka waxaa lagu go'aamiyaa faa'iidada DC ee transistor hFE ama β iyo saldhigga hadda IB, marka hadda loo baahan yahay in lagu wado IGBT uu ka weyn yahay IB * β, markaa transistor-ku wuxuu geli doonaa goobta shaqada ee tooska ah iyo soosaarka wadista hadda jirta kuma filna, markaas dallacaadda iyo xawliga ku shubista capacitor IGBT waxay noqon doontaa mid gaabis ah oo khasaaraha IGBT ayaa kordha.
Isticmaalka MOSFET-yada
MOSFETs sidoo kale waxaa loo isticmaali karaa ballaarinta hadda ee darawalka, wareegga guud ahaan wuxuu ka kooban yahay PMOS + NMOS, laakiin heerka macquulka ah ee qaab dhismeedka wareegga ayaa ka soo horjeeda riixitaanka transistor-ka.Naqshadeynta tuubada sare ee PMOS waxay ku xiran tahay sahayda tamarta togan, albaabku wuu ka hooseeyaa isha PMOS ee danabka la siiyay, iyo wax soo saarka darawalka IC guud ahaan waa heer sare oo shid, sidaas darteed isticmaalka PMOS + qaab dhismeedka NMOS waxaa laga yaabaa in loo baahdo inverter ah in design.
Iyada oo leh laba- transistors ama MOSFETs?
(1) Kala duwanaanshaha waxtarka, sida caadiga ah codsiyada awoodda sare leh, inta jeer ee beddelka ma aha mid aad u sarreeya, sidaas darteed luminta xakamaynta ayaa ah tan ugu weyn, marka transistor-ku leeyahay faa'iidada.Naqshado badan oo cufnaanta awooda sare ee hadda jira, sida wadiyaasha baabuurta korantada, halkaasoo kulaylku ay adagtahay oo heerkulku uu sarreeyo gudaha kiiska ku lifaaqan, marka waxtarku aad muhiim u yahay oo wareegyada transistor-ka la dooran karo.
(2) Wax-soo-saarka laba-cirifoodka transistor-ka wuxuu leeyahay hoos-u-dhac koronto ah oo ay sababtay VCE (sat), korantada sahayda waxay u baahan tahay in la kordhiyo si loo magdhabo tuubada wadista VCE ( fadhiisatay) si loo gaaro korantada wadista ee 15V, halka xalka MOSFET waxay ku dhowdahay inay gaadho wax soo saarka tareen-ilaa-xadiidka.
(3) MOSFET waxay u adkeysaneysaa danab, VGS kaliya qiyaastii 20V, taas oo noqon karta dhibaato u baahan in laga fiirsado marka la isticmaalayo sahay koronto oo togan iyo mid taban.
(4) MOSFET-yadu waxay leeyihiin isku-xidhka heerkulka taban ee Rds (on), halka laba-baxiriyeyaasha laba-cirifoodka ay leeyihiin isku-dheellitir heerkul togan, MOSFET-yaduna waxay leeyihiin dhibaato kulaylka cararka ah marka si isku mid ah loogu xidho.
(5) Haddii la wado Si/SiC MOSFETs, xawaaraha beddelka ee transistor-yada laba-cirifoodka ayaa caadiyan ka gaabiya shayga MOSFETs, kaas oo loo tixgeliyo in loo isticmaalo MOSFETs si loo kordhiyo hadda.
(6) Adkaynta heerka galitaanka ESD iyo koronta sare, laba-cirifoodka transistor PN junction ayaa leh faa'iido weyn marka la barbar dhigo MOS gate oxide.
Bipolar transistors iyo sifooyinka MOSFET isku mid maaha, waxa la isticmaalayo ama waxaad u baahan tahay inaad adigu go'aansato si waafaqsan shuruudaha naqshadeynta nidaamka.
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